InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
نویسندگان
چکیده
A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 104-105 at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band.
منابع مشابه
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling
High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanoc...
متن کاملStrong Optical Filed Intensity Improvement Introducing InGaAsP Quantum Wells in InP Nanocavity
This paper presents the optical characteristics of a quantum well doped InP nanocavity.The resonance wavelength of the nanocavity and the optical field intensity is calculated before and after presence of the quantum wells. The resulting huge filed intensity of about 1.2×108 respect to the incident field is the effect of quantum wells placed in vicinity of center of nanocavity.
متن کاملDesign of Photonic Crystal Polarization Splitter on InP Substrate
In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55mm wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...
متن کاملPicosecond Carrier Lifetime in InGaAsP Grown by He Plasma-Assisted Molecular Beam Epitaxy
InGaAsP grown by He plasma assisted Molecular Beam Epitaxy has a 15 ps carrier lifetime and a sharp band edge allowing for an ultrafast response and a strong optical nonlinearity at the telecommunications wavelength of 1.55 μm. S.D. Benjamin, Li Qian, J.E. Ehrlich, P.W.E. Smith, B.J. Robinson, D.A. Thompson Picosecond carrier lifetime in InGaAsP... 1 Picosecond Carrier Lifetime in InGaAsP Grown...
متن کاملDesign of Photonic Crystal Polarization Splitter on InP Substrate
In this article, we suggested a novel design of polarization splitter based on coupler waveguide on InP substrate at 1.55m wavelength. Photonic crystal structure is consisted of two dimensional (2D) air holes embedded in InP/InGaAsP material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. The photonic band gap (PBG) of this structure is determined using t...
متن کامل